SCT012H90G3AG

SCT012H90G3AG

Part number
SCT012H90G3AG
Product Categories
Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Describe
H2PAK-7
Encapsulation
-
Package
Tape & Reel (TR)
ROHS status
Yes
Price
USD $9.0180
Data sheet
-
Quantity
RFQ
In stock:
Smallest : 1000
Multiple : 1
Quantity
Unit price
Price
1000
$9.0180
$9,018.0000
Alternative models
SCT012H90G3AG
意法-ST
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
Similar models
SCT012H90G3AG
意法-ST
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
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Purchase and inquiry
Specification
Transport
Data sheet
TYPEDESCRIPTION
MfrSTMicroelectronics
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Rds On (Max) @ Id, Vgs15.8mOhm @ 60A, 18V
Power Dissipation (Max)625W (Tc)
Vgs(th) (Max) @ Id4.2V @ 10mA
Supplier Device PackageH2PAK-7
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Vgs (Max)+18V, -5V
Drain to Source Voltage (Vdss)900 V
Gate Charge (Qg) (Max) @ Vgs138 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds3880 pF @ 600 V
QualificationAEC-Q101

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FedEx International, 5-7 business days.

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