CGD65B200S2-T13
CGD65B200S2-T13
Part number
CGD65B200S2-T13
Product Categories
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Describe
650V GAN HEMT, 200MOHM, DFN5X6.
Encapsulation
-
Package
Tape & Reel (TR)
ROHS status
Yes
Price
USD $1.3650
Data sheet
Quantity
RFQ
In stock:
Smallest : 5000
Multiple : 1
Quantity
Unit price
Price
1
$1.3650
$1.3650
10
$1.1460
$11.4600
100
$0.9270
$92.7000
500
$0.8250
$412.5000
1000
$0.7050
$705.0000
2000
$0.6630
$1,326.0000
5000
$0.6390
$3,195.0000
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Purchase and inquiry
Specification
Transport
Data sheet
ABLIC U.S.A. Inc. S-1132B33-I6T2U has similar specifications, properties, parameters and parts as ABLIC U.S.A. Inc. S-1132B33-I6T2U.
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 600mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 2.75mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 12 V

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transport

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